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 Shantou Huashan Electronic Devices Co.,Ltd.
HCP6C60
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=6A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection, motor control cicuit in power tool, inrush current limit circuit and heating control system.
Absolute Maximum RatingsTa=25 unless otherwise specified
T s t g ----Storage Temperature ------------------------------------------------------ -40~125 T j ----Operating Junction Temperature ---------------------------------------------- -40~125 VDRM ----Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V ITRMS----R.M.S On-State Current180 Conduction Angles------------------------------------------6A IT(AV) ----Average On-State Current (Half Sine Wave : TC = 106 C) ----------------------------------------3.8A ITSM ----Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ------------------------PGM ----Forward Peak Gate Power Dissipation (Ta=25) --------------------------------------------------66A 5W
IFGM ----Forward Peak Gate Current -------------------------------------------------------------------------------- 2A VRGM ----Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
Shantou Huashan Electronic Devices Co.,Ltd.
HCP6C60
Electrical CharacteristicsTa=25 unless otherwise specified
Symbol IDRM VTM IGT VGT VGD IH Rth(j-c) Rth(j-a) dv/dt Repetitive Current Items Peak Off-State Min. Typ. Max. 10 200 1.6 15 1.5 0.2 20 V Unit VAK=VDRM uA V mA Conditions
Tc=25 Tc=125
ITM=9A,tp=380s VAK =6V(DC), RL=10 ohm
Peak On-State Voltage (1) Gate Trigger Current2 Gate Trigger Voltage (2) Non-Trigger Gate Voltage Holding Current Thermal Resistance Thermal Resistance Critical Rate of Rise Off-state Voltage 200
Tc=25
VAK =6V(DC), RL=10 ohm
Tc=25
VAK =12V, RL=100 ohm
V
Tc=125 IT=100mA,Gate open, mA Tc=25
Junction to Case Junction to Ambient Linear slope up to VD=VDRM67% Gate open Tj=125
3.12 89
/W /W V/s
1. Forward current applied for 1 ms maximum duration,duty cycle 1%. 2. RGK current is not included in measurement
Performance Curves
FIGURE 1 - Gate Characteristics Max. Allowable Case Temperture (c) FIGURE 2 - Maximum CaseTemperture
Gate Voltage (v)
Gate
Current
(mA)
Average On-State Current (mA)
Shantou Huashan Electronic Devices Co.,Ltd.
HCP6C60
FIGURE 4-Thermal Response
FIGURE 3-Typical Forward Voltage(V) Transient Thermal Imperdance (c) On-State Voltage (V) FIGURE 5-Typical Gate Trigger Voltage VS Junction Temperature
On-State Current(A)
Time (sec) FIGURE 6-Typical Gate Trigger Current VS Junction Temperature
Junction Temperature (C) FIGURE 7-Typical Holding Current
Junction Temperature (C) FIGURE 8-Power Dissipation
Max. Average Power Junction Temperature (C)
Dissipation (W)
Average On-State Current (A)


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